| 发明名称 |
PROCEDIMENTO PER IL TIRAGGIO DI UN MONOCRISTALLO DI SILICIO |
| 摘要 |
A method for pulling a silicon single crystal has the single crystal being pulled at a speed defined as maximum pulling speed in the vertical direction with respect to a silicon melt held in a crucible. The value of the maximum pulling speed is approximately proportional to the axial temperature gradient in the growing single crystal. |
| 申请公布号 |
IT1280041(B1) |
申请公布日期 |
1997.12.29 |
| 申请号 |
IT1994RM00778 |
申请日期 |
1994.11.28 |
| 申请人 |
WACKER-CHEMITRONIC GESELLSCHAFT FUR ELEKTRONIK-GRUNDSTOFFE MBH |
发明人 |
VON AMMON WILFRIED;DORNBERGER ERICH;OELKRUG HANS;GERLACH PETER;SEGIETH FRANZ |
| 分类号 |
C30B15/22;C30B15/00;C30B29/06;H01L21/208 |
主分类号 |
C30B15/22 |
| 代理机构 |
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代理人 |
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| 地址 |
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