| 摘要 |
The present invention relates a method for making a phase shift mask of a semiconductor element. A sensitive film pattern is formed on a quartz substrate wherein the sensive film pattern sets photo transmission and non-transmission areas(A,B). The quartz substrate is etched in a predetermined depth by using the sensitive film pattern to form an etch groove(3) in the photo transmission area(A). A quarts substrate(1) in a boundary portion of photo transmission and non-transmission areas(A,B) which is divided based on a side wall of etch groove(3) is etched and a chrome pattern is formed on a quartz of the non-transmission areas(B) which was not etched. According to the present invention, a phase shift of 180= is generated at an edge portion of etch groove(3) defining a boundary of photo transmission and non-transmission areas(A,B) when a light is transmitted so that an intensity of a photo transmission becomes zero. Therefore, the present invention increases a process margin and resolution and is used for a deep ultraviolet having a short wavelength of 248 nm. |
