METAL WIRING MOLDING METHOD OF SEMICONDUCTOR DEVICE

摘要

A method for implanting impurities of an alloy for metal wires is provided to improve a property of an alloy. The method comprises the steps of: forming a contact hole by etching an insulating layer(2) deposited on a silicon substrate(1); depositing a diffusion preventing metal layer(3) on the contact hole; depositing an impurity layer(4) on the resultant structure; depositing a metal wiring alloy film(5) on the impurity layer(4); and forming an anti-reflection layer(7) on the metal wiring alloy film(5).