| 摘要 |
<p>Method for making a conducting connection between two spaced metallic layers situated in a semiconductor substrate. After a hole, a so-called via, has been made by etching, tungsten or aluminium is introduced into the hole by conventional techniques, such as CVD or force filling. In order to provide optimum connection to the bottom metallic layer of the hole, it is necessary to clean the latter. It is proposed that this cleaning should be carried out with germane-containing gas.</p> |
