发明名称 GATE DRIVE CIRCUIT FOR AN SCR
摘要 A gate drive circuit for a silicon controlled rectifier (SCR) connected in an a-c power circuit includes a voltage divider network connected between a d-c voltage source and the SCR for developing a varying voltage on a control node, depending upon whether the anode-to-cathode a-c voltage of the SCR is positive or negative. A first switching transistor, responsive to the control node voltage, controls conduction of a second switching transistor connected between the d-c voltage source and a voltage regulated driver circuit. In this way, a constant drive current is applied to the SCR gate only while the anode-to-cathode voltage of the SCR is positive.
申请公布号 WO9749165(A1) 申请公布日期 1997.12.24
申请号 WO1997US11528 申请日期 1997.06.19
申请人 YORK INTERNATIONAL CORPORATION 发明人 SCHNETZKA, HAROLD, R.;NORBECK, DEAN, K.;TOLLINGER, DONALD, L.
分类号 H02M1/08;H02M7/155;(IPC1-7):H02M1/08 主分类号 H02M1/08
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