PHOTOELECTRONIC MATERIAL, DEVICE USING THE SAME, AND METHOD FOR MANUFACTURING THE SAME

摘要

A photoelectronic material is composed of a homogeneous medium which can be controlled in electrical property and ultrafine semiconductor particles which have a mean particle diameter of not larger than 100 nm and scattered in the medium and an element to which the material is applied. In a method for manufacturing the photoelectronic material, a layer in which the ultrafine semiconductor particles are scattered in the medium is formed on a substrate by respectively irradiating a first target which is set in a reaction chamber maintained in a low-pressure rare gas atmosphere and composed of a semiconductor material and a second target which is set in the chamber and composed of a medium material which can be controlled in electrical property with laser beams and collecting ultrafine semiconductor particles having a mean particle diameter of not larger than 100 nm on the substrate by condensing and growing the semiconductor material ablated from the first target and, at the same time, collecting the medium material on the substrate by condensing and growing the material ablated from the second target.