发明名称 Waveguide type semiconductor photodetecting device and fabrication process therefor
摘要 A waveguide type semiconductor photodetecting device has a semiconductor substrate, a photodetecting element, and a waveguide optically coupled with the photodetecting element which can avoid occurrence of light loss in the tapered waveguide even when a width of a light inciding side of the tapered waveguide is widened. The waveguide has a waveguide layer gradually narrowing a width and gradually increasing a layer thickness and a refraction index from light incident side to the photodetecting element. The waveguide is integrated with the photodetecting element on the semiconductor substrate.
申请公布号 US5701379(A) 申请公布日期 1997.12.23
申请号 US19960757999 申请日期 1996.11.27
申请人 NEC CORPORATION 发明人 TAKEUCHI, TAKESHI
分类号 H01L31/10;G02B6/12;G02B6/122;G02B6/125;G02B6/30;H01L31/0232;(IPC1-7):G02B6/10 主分类号 H01L31/10
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