发明名称 |
Semiconductor storage device with macro-cell with monitoring of input data |
摘要 |
It is an object of the present invention to realize bypass of input data in a macro-cell such as a FIFO memory etc. to facilitate test and evaluation about other macro-cells. A bypass route (6) is provided between an input port (DI) and an output port (DO) in a FIFO memory (1) and a data bypassing selector (8) is further provided for selecting the bypass route (6) and a sense amplifier (7) of a read bit line (R.BL). Then, in the test mode, a first selector control signal (S) is set to an L level and a second selector control signal (+E,ovs S+EE ) of opposite phase is set to an H level. Thus, in the test mode, a data inputted from the input port (DI) is outputted from the output port (DO) by way of the bypass route (6) without via memory cells (MC1-MCX).
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申请公布号 |
US5701267(A) |
申请公布日期 |
1997.12.23 |
申请号 |
US19950578892 |
申请日期 |
1995.12.27 |
申请人 |
MITSUBISHI ELECTRIC ENGINEERING CO., LTD.;MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MASUDA, SHINICHI;KUMAKI, SATOSHI;MATSUURA, YOSHINORI |
分类号 |
G01R31/28;G01R31/3185;G11C7/00;G11C29/00;G11C29/14;G11C29/22;G11C29/56;(IPC1-7):G11C13/00 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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