| 发明名称 |
Process for forming silicide plugs in semiconductor devices |
| 摘要 |
A process for forming a uniform silicide plug inside an opening in a semiconductor to form fine contacts is disclosed wherein a silicon based material which is inserted into a hole formed in a substrate is reacted with a metal layer to form the contacts.
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| 申请公布号 |
US5700722(A) |
申请公布日期 |
1997.12.23 |
| 申请号 |
US19960591913 |
申请日期 |
1996.01.25 |
| 申请人 |
SONY CORPORATION |
发明人 |
SUMI, HIROFUMI |
| 分类号 |
H01L21/28;H01L21/3205;H01L21/768;H01L23/52;H01L23/522;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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