发明名称 |
Method for manufacturing an insulating trench in an SOI substrate for smartpower technologies |
摘要 |
A method for producing an insulating trench in an SOI substrate having integrated logic elements and high-voltage power components is provided. A trench extending down to an insulating layer is etched and covered with a doped silicon structure. Diffusion regions neighboring the trench are produced by drive-out from the doped amorphous silicon structure and an insulation structure is simultaneously produced in the trench by oxidation of the doped silicon structure.
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申请公布号 |
US5700712(A) |
申请公布日期 |
1997.12.23 |
申请号 |
US19950552976 |
申请日期 |
1995.11.03 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
SCHWALKE, UDO |
分类号 |
H01L21/225;H01L21/76;H01L21/762;H01L27/12;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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