发明名称 |
Insulator deposition using focused ion beam |
摘要 |
Methods are provided for depositing insulator material at a pre-defined area of an integrated circuit (IC) by: placing an IC in a vacuum chamber; applying to a localized surface region of the integrated circuit at which insulator material is to be deposited a first gas containing molecules of a dissociable compound comprising atoms of silicon and oxygen and a second gas containing molecules of a compound which reacts with metal ions; generating a focused ion beam having metal ions of sufficient energy to dissociate molecules of the first gas; and directing the focused ion beam at the localized surface region to dissociate at least some of the molecules of the first gas and to thereby deposit on at least a portion of the localized surface region a material containing atoms of silicon and oxygen. The dissociable compound comprises atoms of carbon and hydrogen, such as di-t-butoxydiacetoxy-silane. The compound which reacts with metal ions may be carbon tetrabromide or ammonium carbonate.
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申请公布号 |
US5700526(A) |
申请公布日期 |
1997.12.23 |
申请号 |
US19950434548 |
申请日期 |
1995.05.04 |
申请人 |
SCHLUMBERGER TECHNOLOGIES INC. |
发明人 |
XIMEN, HONGYU;CECERE, MICHAEL A.;MASNAGHETTI, DOUGLAS |
分类号 |
C23C16/48;C23C16/04;C23C16/40;H01L21/316;H01L21/768;(IPC1-7):C23C14/10 |
主分类号 |
C23C16/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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