发明名称 |
Method of reducing contact resistance for semiconductor manufacturing processes using tungsten plugs |
摘要 |
A system and method for reducing the contact resistance associated with tungsten plug contacts to P-doped diffusion regions of a semiconductor device. Before or during the formation of the tungsten plug contacts, a high energy, low dosage of an N-dopant or neutral species such as silicon or germanium is implanted into the P-doped diffusion regions of the semiconductor device. The implantation causes lattice damage within the P-doped diffusion regions, enhancing diffusion of the P-dopant within the P-doped diffusion regions. This results in the P-dopant diffusing toward the contact, replacing dopant lost to segregation into the contact metalization, and thus reducing the contact resistance.
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申请公布号 |
US5700717(A) |
申请公布日期 |
1997.12.23 |
申请号 |
US19950557659 |
申请日期 |
1995.11.13 |
申请人 |
VLSI TECHNOLOGY, INC. |
发明人 |
NOWAK, EDWARD D.;LOH, YING-TSONG;DING, LILY |
分类号 |
H01L21/285;(IPC1-7):A01L21/28 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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