Highly selective nitride spacer etch

摘要

A method is provided for forming a nitride spacer, in which a layer of oxide is grown superjacent a substrate and the semiconductor features disposed thereon. A layer of nitride is deposited superjacent the oxide layer, and a major horizontal portion of the nitride layer anisotropically etched with an ionized fluorocarbon compound. The remainder of the horizontal portion of the nitride layer is removed with NF3 ions in combination with ionized halogen-containing compound, thereby creating nitride spacers adjacent the features.