Method for producing a semiconducting material

摘要

A method for producing a semiconducting material by subjecting a hydrosilane monomer to dehydrogenative condensation followed by thermal decomposition is disclosed. The hydrosilane monomer may be a hydromonosilane, a hydrodisilane or a hydrotrisilane. The dehydrogenative condensation is conducted in the presence of a catalyst that contains at least one metal or metal compound of Groups 3B, 4B and 8 of the Periodic Table. The catalyst may be used in conjunction with a silane compound or a metal hydride. The semiconducting material that is formed may have a silicon content of 70 atomic % or more.