| 摘要 |
In a mask for X-ray lithography and a method for manufacturing the same, a mask pattern is formed on a first silicon substrate and then an intermediate material is coated on the mask pattern in order to protect the mask pattern and further the intermediate material of the first silicon substrate is stuck on a second silicon substrate where a membrane is to be formed. Next, the second silicon substrate is thinned by methods of grinding and polishing. Here, thickness of the membrane can be controlled depending on an etching amount in unit of grinding and polishing. Therefore, since the membrane is formed after the mask pattern has been formed, not only transformation of the mask pattern generated from a process of mask pattern and breakage of the mask pattern can be prevented but also thickness of the mask pattern can be controlled as desired. |
