| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an epitaxial growth device being excellent in mass productivity, having a small occupation area, being excellent in the uniformity inside the surface of an epitaxial layer, hardly generating a crystal defect, and not forming a thin film on the inside wall of an epitaxial growth chamber. SOLUTION: An epitaxial growth device is provided with a vertical epitaxial growth chamber 10, a substrate-holding jig 30 horizontally holding respective substrates 32, besides vertically holding a plurality of such substrates, and provided in the epitaxial growth chamber 10, an inducttion heating device 26 arranged outside the epitaxial growth chamber 10, a material gas introduction part 40 provided in the epitaxial growth chamber 10 for forming an epitaxial layer on the substrate, and a gas exhausting part 42. In this case, substrate- holding jig 30 is made of a conductive material of which surface is covered-with silicon carbide(SiC).</p> |
