SEMICONDUCTOR CRYSTAL BODY AND PRODUCTION THEREOF, SEMICONDUCTOR LASER AND FABRICATION THEREOF, SEMICONDUCTOR LIGHT RECEIVING ELEMENT AND FABRICATION THEREOF, AND FIELD EFFECT TRANSISTOR AND FABRICATION THEREOF

摘要

PROBLEM TO BE SOLVED: To diffuse impurities at high concentration into a semiconductor crystal body having a large diameter under mirror face state. SOLUTION: The method for producing a semiconductor crystal body by vapor phase epitaxial growth employs a compound containing a group III element, i.e., TMIn, and a compound containing a group V element, i.e., PH3 , as a material of semiconductor and a compound containing a group II element of Zn, i.e., DMZn, as a material of impurity diffusion species. Crystal growth temperature is set at 420 deg.C, for example, which is lower than a normal level for bringing about a mirror face state at the crystal growth interface. Subsequently, an undoped layer 12 of 2μm thick is grown on a substrate 11 of InP doped with Sn and a Zn doped layer 13 of 1μm thick is grown thereon while feeding a diffusion species Zn at a concentration of 5×10<18> cm<-3> which is higher than the saturated concentration of normal diffusion species Zn.