| 摘要 |
PROBLEM TO BE SOLVED: To provide a positive characteristic thermistor which is low in its resistive value especially at room temperature and is large in its breakdown voltage. SOLUTION: At least one of rare earth elements and Nb, Bi, Sb oxides as semiconductor formation elements is added to and mixed with such a raw material powder as to generate barium titanate or its solid solution, the raw material powder is calcined in a temperature range of 1200-1300 deg.C in an air or reducing atmosphere to form a composition, oxides of Si, Mn and Ti are added to the calcined composition and mixed therewith, the mixture is properly burned at a temperature above 1300 deg.C, and raw material containing the semiconductor formation elements having particle diameters of 1.0μm or less and SiO2 having particle diameters of 3.0μm or less is used to form a positive characteristic thermistor. |
