| 摘要 |
PROBLEM TO BE SOLVED: To suppress the increase of a leak current resulting from the current application time at a high temperature, and to improve insulating property and reliability by a method in which a dielectric thin film is composed at least of titanium, strontium and erbium containing oxide material. SOLUTION: On a dielectric thin film capacitor element, a silicon thermally oxidized film 2, a Ti adhesive layer 3, a Pt lower electrode layer 4, a dielectric thin film 5 consisting of oxide material containing titanium, strontium and erbium, and a p<+> upper electrode layer 6 are formed successively on an n-type silicon substrate 1. The dielectric thin film capacitor element is manufactured as follows: First, a thermally oxidized film 2 of 200nm in thickness is formed on the surface of the n-type silicon substrate 1 as an insulating layer by thermally oxidizing method. A Ta adhesive layer 3 of 30nm in thickness and a Pt lower electrode layer 4 of 200nm in thickness are formed successively on the silicon thermally oxidized film 2 by a DC sputtering method. |
