| 摘要 |
PROBLEM TO BE SOLVED: To obtain the subject base material excellent in thermal conductivity, durability and corrosion resistance, etc., by oxidizing an aluminum nitride sintered compact to form an oxidized layer on the surface followed by forming a metal fluoride layer on the above layer. SOLUTION: First, an aluminum nitride sintered compact 11 is heat-treated in an oxygen atmosphere at about 1,100-1,500 deg.C to form an oxidized layer 12 on the surface of the sintered compact 11. Subsequently, a metal fluoride layer 14 (e.g. aluminum fluoride layer) is formed at a thickness of about 0.01-5μm on the surface of the oxidized layer 12 by vacuum deposition or sputtering technique, thus obtaining the objective aluminum nitride base materials 10, 20, each of which is excellent in durability to thermal shock and has high resistance to fluorine gas; therefore, this base material is useful as a holder or susceptor to put an wafer 15 on in a semiconductor production unit using esp. fluorine gas system.
|
