| 摘要 |
<p>PROBLEM TO BE SOLVED: To make it possible to surely execute an etching treatment and to improve image quality and yield by eliminating blurring which occurs at the time of washing and drying. SOLUTION: Water repellent films 30 are formed on the surfaces of insulating films 5 for forming channels arranged between amorphous silicon films 4 formed on a substrate 1 and amorphous silicon films 6 added with impurities. As a result, water is rapidly drained without being trapped and the occurrence of the blurring is averted at the time of washing and drying in a resist removing and washing stage after etching the insulating films 5 for forming channels and a naturally oxidized film removing stage for ensuring the contact with the amorphous silicon films 6 added with the impurities. The etching defect by the blurring which acts as a mask at the time of forming the amorphous silicon films 6 which are added with the impurities and constitut source and drain electrodes 15, 16 and the contact defect with the channels are eliminated and, therefore, the defect of a dot defect level is eliminated.</p> |
