| 摘要 |
PROBLEM TO BE SOLVED: To improve the flatness and the specific resistance of a film and the resistivity to the high temperature process conducted in an oxygen atmosphere of the film by a method in which the partial pressure ratio of sputtering gas is maintained constant, the oxygen partial pressure is controlled by changing the total pressure of the sputtering gas, and an oxide electrode film is formed. SOLUTION: In this oxide electrode film forming method, an oxide electrode film, consisting of ruthenium oxide, is formed on a substrate, the partial pressure ratio of oxygen of sputtering gas is maintained constant, and the oxide electrode film is formed by controlling the amount of partial pressure of oxygen by changing the total pressure of sputtering gas. Besides, the partial pressure of oxygen of sputtering gas is set higher than the partial pressure ratio of oxygen at which a ruthenium oxide film is formed, and the total pressure of sputtering gas is set at 2Pa or lower. Also, the substrate temperature when the oxide electrode film is formed is set in the temperature range between 200 deg.C and 400 deg.C. As a result, a ruthenium oxide film, having excellent flatness of film, ρ(rho)v (specific resistance) and the rigidity to the high temperature heat treatment process in an oxygen atmosphere, can be accomplished. |
