Switching load relief method for power IGBT

摘要

The method involves holding a semiconducting switch (Tc) in the conducting state to ensure the insulated gate bipolar transistor (T1) is switched off when the current flow through the switch has risen to a fixed value relative to the current (Io) flow through the IGBT and a load (Ls). The IGBT is then driven into the blocking state. The fixed value of the current up to which the semiconducting switch is driven into the conducting state is defined depending on a balanced energy state of the switch-off capacitance (Cc) during a full switching cycle.