| 摘要 |
A semiconductor memory cell and method thereof are disclosed. The semiconductor memory cell comprises a capacitor and a switching transistor formed at an active region, and connected to a bit line and an word line. A storage electrode of the capacitor has a tube-shaped structure entirely surrounding the bit line of desired length. Also, the tube axis of the storage electrode of the capacitor is arranged to same direction as the arranged direction of the source, gate and drain of the switching transistor. The active region is arranged to horizontal direction to the bit line and to vertical direction to the line.
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