| 摘要 |
<p>The invention provides a method of making an ohmic contact to an n-type diamond or an injecting contact to a p-type diamond. The method includes the steps of implanting a surface of the diamond with an n-type dopant atom at a dose just below the amorphisation threshold of the diamond to create an implanted region below the surface and extending from the surface, annealing the implanted region to allow tunnelling of electrons into the diamond in the case of an n-type diamond and allow electrons to be injected into the diamond in the case of a p-type diamond, and metallising at least a portion of the surface through which implantation occurred.</p> |
