Semiconductor component, e.g. IGBT, for control of motor or switching inverter

摘要

The component includes two main, opposite surfaces (14a,14b) which conduct or interrupt current flow between the main surfaces. An N-drift region (1), a P-base region (2), and an N-emitter region (3) are formed in a semiconductor substrate (14). A groove (4) in contact with the base and emitter region is formed in the substrate and contains a gate electrode (6) with an intermediate gate insulating layer (5). There are two metal electrode layers (8a,8b), one (8a) coupled electrically to the emitter region and the second (8b) to the base region. A DC power source (12) is coupled to the two metal electrode layers such that the ON state voltage can be correspondingly reduced.