| 摘要 |
<p>A lapping pad (31) used to polish wafers in a CMP process comprising a substantially flat surface (32) having relatively few surface irregularities (34). The lapping pad (31) is suitably made from a porous material which permits the adsorption and/or entrainment of suitable slurries, for example, aqueous high pH slurries comprising colloidal silica, or the like. Moreover, pad (31) is relatively pliable to permit the undersurface of pad (31) to conform to the global topography of a workpiece (12) being polished without damaging the delicate microstructures (24) associated with workpiece (12) as pressures are applied between pad (31) and workpiece (12). Finally, the flat surface (32) of pad (31) urges particles (14) onto surface (18) of workpiece (12) more uniformly, thereby resulting in a more uniform planar surface (18) of workpiece (12).</p> |
