| 发明名称 |
MICROWAVE POWER SOI-MOSFET WITH HIGH CONDUCTIVITY METAL GATE |
| 摘要 |
A technique for making a microwave, high power SOI-MOFET device is set forth together with such a device. An important aspect of this structure is the presence of high conductivity metal gate fingers for the device. |
| 申请公布号 |
EP0812471(A1) |
申请公布日期 |
1997.12.17 |
| 申请号 |
EP19960939276 |
申请日期 |
1996.12.10 |
| 申请人 |
PHILIPS ELECTRONICS N.V. |
发明人 |
KIM, MANJIN, J. |
| 分类号 |
H01L29/78;H01L21/336;H01L29/786;(IPC1-7):H01L21/336;H01L23/66;H01L21/84 |
主分类号 |
H01L29/78 |
| 代理机构 |
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