| 摘要 |
PURPOSE:To accurately control the heat treatment period of an object to be processed by a method wherein, after heat treatment, the object to be processed is cooled and maintained for a time by installing a cooling means jetting cooling gas against the object to be processed which is separated from a heating unit. CONSTITUTION:When heat treatment is finished, a heating plate 18 is made to descend by an air cylinder 24, and a space 33 is formed between a semiconductor wafer 17 and the heating plate 18. A cooling nozzle 32 progresses in the vicinity of the center of the heating plate 18 in the space 33, and jets nitrogen gas against the wafer 17 and all over the horizontal direction, from a ring type nozzle of the nozzle 32. The gas flows along the lower surface of the wafer 17, from the center toward the peripheral part, cools the wafer 17, and prevent the convection from the heating plate 18. The gas is discharged outside the chamber 16 from an exhaust vent 21, together with impurity. By making it possible to cool the wafer after heat treatment and maintain it for a time in this manner, the accurate control of the heat treatment period is enabled. |
