| 发明名称 |
Method of manufacturing an insulation layer having a flat surface |
| 摘要 |
In a method of manufacturing an insulation layer on a semiconductor substrate, a first insulation film is deposited on the semiconductor substrate more thicker than a wiring layer formed on the semiconductor substrate. The first insulation film is mechano-chemically polished to expose a void formed in the first insulation film. The first insulation film is etched to widen an entrance portion of the void. A second insulation film is formed on the first insulation film to be embedded into the void. The second insulation film is etched at least to the first insulation film, with a part of the second insulation film left within the void. The exposed first insulation film and the left second insulation film has a flat surface.
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| 申请公布号 |
US5698467(A) |
申请公布日期 |
1997.12.16 |
| 申请号 |
US19960742811 |
申请日期 |
1996.11.01 |
| 申请人 |
NEC CORPORATION |
发明人 |
SAKAO, MASATO;TAKAISHI, YOSHIHIRO |
| 分类号 |
H01L21/302;H01L21/304;H01L21/3065;H01L21/3105;H01L21/316;H01L21/3205;H01L21/768;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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