| 摘要 |
PROBLEM TO BE SOLVED: To make a semiconductor device excellent in step coverage and prevent the wire breaking at the step of a gate, by applying a process of forming a gate electrode which has a difference in level and a process of forming a CVD conductive film as a local wiring film. SOLUTION: A Ti film 8 is piled up in about 400Å, and thereon a W film 9 is piled up in about 1000Åby CVD method. A photoresist 10 is left in the place to be left as a local wiring film by photolithography. Next, using the photoresist 10 as a mask, only the W film 9 is etched. Next, a silicide process is executed, according to a normal two-step method. That is, silicon and Ti are reacted upon each other by first heat reaction, and then the unreacted Ti on an oxide film is removed, and TiSi2 11 is made low resistant by the second heat reaction. According to the normal method, an insulating film 12 is piled up, and a contact hole 13 is opened, and metallic wiring 14 is made. Since CVD film is used as a local wiring film, this is excellent in step coverage and the wire breaking does not occur at the gate step.
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