发明名称 FORMATION OF THIN FILM ARTIFICIAL LATTICE AND THIN FILM FORMING DEVICE
摘要 PROBLEM TO BE SOLVED: To form an artificial lattice structure on a microscale particularly having a certain angle not vertial or parallel to a substrate by a relatively simple method. SOLUTION: A certain energy line or plural kinds of energy lines with different energy are used, excluding one kind among the plural kinds of energy lines, the others are bisected and the bisected energy lines are applied so as to interfere the material system composing the material to be treated for forming an artificial lattice to be produced (there is a case in which the material to be treated is composed of the material system contg. substance capable of absorbing specified energy in the energy lines) to produce an artificial lattice forming a structure in which a part of the material system is modified by the irradiation of the bisected energy ines, and regions 1 and regions 2 respectively having desired physical properties are alternately repeated.
申请公布号 JPH09324259(A) 申请公布日期 1997.12.16
申请号 JP19960142533 申请日期 1996.06.05
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KARASAWA TAKESHI;TAKETOMI YOSHINAO
分类号 C30B29/48;C23C14/00;H01L29/06;H01L29/15;(IPC1-7):C23C14/00 主分类号 C30B29/48
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