| 摘要 |
PROBLEM TO BE SOLVED: To obtain a stacked capacitor having large capacitance by a method wherein the lower layer electrode of the capacitor is formed by removing a first polysilicon layer, the dielectric layer of the capacitor and a second polysilicon layer are then formed thereon, and then a capacitor layer is formed by etching the second polysilicon layer and the dielectric layer of the capacitor. SOLUTION: A field oxide layer 12 is formed on a o-type semiconductor 10 and then a metal oxide FET transistor, a neutral silicon dioxide layer 20 and a silicon nitride layer 22 are formed sequentially thereon. Subsequently, various silicon oxides, e.g. a first plasma silicon dioxide and a first thermal CVD silicon dioxide, are formed thus obtaining an alternating multilayer structure. A photoresist pattern is then formed thereon and eventually removed by etching to form a cell contact. Thereafter, a first polysilicon is deposited and eventually removed to form the lower layer electrode of a capacitor. Finally, a polysilicon layer 44, a dielectric layer 46 of the capacitor and a second polysilicon layer 48 are formed and eventually etched to form the upper layer electrode of the capacitor. |
