发明名称 |
P-N-P DIAMOND TRANSISTOR |
摘要 |
The present invention provides a P-N-P diamond transistor and a method of manufacture thereof. The transistor comprises a diamond substrate having two p-type semiconducting regions separated by an insulating region with an n-type semiconducting layer established by chemical vapour deposition. Preferably the p-type regions are obtained by doping with boron and controlling the concentration of nitrogen impurities by the use of nitrogen getters. The n-type layer preferably contains phosphorus.
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申请公布号 |
CA2046284(C) |
申请公布日期 |
1997.12.16 |
申请号 |
CA19902046284 |
申请日期 |
1990.02.01 |
申请人 |
GERSAN ESTABLISHMENT |
发明人 |
WELBOURN, CHRISOPHER MARK |
分类号 |
H01L21/20;H01L21/331;H01L29/16;H01L29/73;H01L29/735;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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