发明名称 PRODUCTION OF ACTIVE MATRIX SUBSTRATE
摘要 <p>PROBLEM TO BE SOLVED: To manufacture an active matrix substrate which is not destroyed by static electricity at a low cost at the time of patterning and forming source electrodes and drain electrodes of TFTs by using source wirings and connecting electrodes as a mask. SOLUTION: Gate wirings 12 and gate films 4 are formed on a transparent insulative substrate. Shorting wirings 14 of two-layered structures composed of a layer 5c consisting of the same material as the material of a semiconductor layer 5 and a layer 6c consisting of the same material as the material of the source electrodes are formed thereon. Next, an ITO film 28 is formed as a transparent conductive film consisting of the same material as the material of the source wirings. Thereafter, the etching of the conductive film 28 is executed, thereby, the ITO layers 16c are made to remain on the shorting wirings 14 and the wirings 16 are made to remain on the gate wirings 1. An interlayer insulating film is thereafter formed to cover the entire surface of the substrate. This interlayer insulating film of terminal parts is removed at the time of forming contact holes. The terminal parts are covered with the mask to prevent the formation of the transparent insulating film at the time of forming the transparent insulating film which constitutes pixel electrodes.</p>
申请公布号 JPH09325361(A) 申请公布日期 1997.12.16
申请号 JP19960141987 申请日期 1996.06.04
申请人 SHARP CORP 发明人 YAMAKAWA MASAYA;KAWAI KATSUHIRO;NISHINO HIROKI
分类号 G02F1/136;G02F1/1368;H01L21/336;H01L29/786;(IPC1-7):G02F1/136 主分类号 G02F1/136
代理机构 代理人
主权项
地址