发明名称 MANUFACTURING METHOD OF (BA, SR)TIO3 FILM, AND THIN FILM CAPACITOR USING IT
摘要 PROBLEM TO BE SOLVED: To form a (Ba, Sr)TiO3 thin film having a high dielectric constant, by introducing stock gas, carrier gas, and reaction gas into a reaction chamber, and forming an oxide thin film on a substrate at a predetermined temperature held on a substrate holder. SOLUTION: A reaction chamber 1 is evacuated with an evacuation means 6 and is brought into a low pressure state. Then, a substrate 3 is heated with a substrate heating heater 2, and with a substrate holder 4 rotated stock gas for forming a (Ba, Sr)TiO3 thin film and oxygen are supplied into the reaction chamber 1 with a stock gas supply means 8. Plasma discharge is produced by supplying electric power to between the substrate holder 4 and an electrode 5. Hereby, there is formed on the substrate 3a (Ba, Sr)TiO3 thin film oriented preferentially along the (100) plane. A this time, the stock gas supply means 8 is brought into the state where it is inclined by a predetermined angleθwith respect to the substrate holder 4.
申请公布号 JPH09326331(A) 申请公布日期 1997.12.16
申请号 JP19960142535 申请日期 1996.06.05
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 FUJII AKIYUKI;TORII HIDEO;TAKAYAMA RYOICHI
分类号 C01G23/00;C23C16/40;C23C16/44;C23C16/455;C30B25/14;C30B29/32;H01G4/12;H01G4/33;(IPC1-7):H01G4/33 主分类号 C01G23/00
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