| 摘要 |
A method of detecting particles on a wafer support surface comprising positioning a wafer in a first position on the surface with the wafer in the first position, generating a first pattern on the wafer, and moving the wafer. Then, after moving the wafer, generating a second pattern on the wafer to generate a moir+E,acu e+EE pattern by the interaction of the second pattern with the first pattern. The moir+E,acu e+EE pattern is inspected to identify any visual distortion in the moir+E,acu e+EE pattern due to physical distortion of the wafer caused by a particle on the support surface during the generation of the first pattern. The patterns may be ruled parallel lines, and the second pattern may be moved during inspection to shift the moir+E,acu e+EE pattern to reveal distortions over a wide area.
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