| 摘要 |
The present invention is directed to a method and device for oxidation of a semiconductor layer of SiC at the surface thereof for forming an insulating surface layer of SiO2, in which the semiconductor layer is heated and oxygen is fed to the surface of the semiconductor layer for diffusing thereinto and reacting with the SiC in the surface layer while oxidating it to form SiO2 and C-oxides that diffuse out of the semiconductor layer, wherein the surface of the semiconductor layer is illuminated by vacuum ultraviolet light during at least a phase of the oxidation to improve the quality of the SiO2 layer formed.
|
