发明名称 |
Heat-resistant electrode material, electrode using the same, and apparatus having plasma generating unit using this electrode |
摘要 |
A heat-resistive electrode material substantially consisting of 40 to 60 wt % of at least one of ZrB2 and TiB2, 20 to 50 wt % of BN, and not more than 30 wt % of AlN is disclosed. This heat-resistive electrode material is used in at least portions of electrodes of an apparatus having a plasma generating unit, e.g., an ion source, a plasma etching apparatus, or a plasma CVD apparatus, that contacts a plasma.
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申请公布号 |
US5698035(A) |
申请公布日期 |
1997.12.16 |
申请号 |
US19970782939 |
申请日期 |
1997.01.13 |
申请人 |
TOKYO ELECTRON LIMITED;DENKI KAGAKU KOGYO KABUSHIKI KAISHA |
发明人 |
MATSUDO, MASAHIKO;KOSHIISHI, AKIRA;ISOZAKI, KEI;HIRASHIMA, YUTAKA |
分类号 |
H01J1/48;C23C16/50;H01J37/32;H01J49/14;H01L21/205;H01L21/265;H01L21/302;H01L21/3065;(IPC1-7):C23C16/00 |
主分类号 |
H01J1/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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