发明名称 |
Turn-off, MOS-controlled, power semiconductor component |
摘要 |
In a MOS-controlled turn-off thyristor (MCT), a conventional integral cell with a combined emitter and short-circuiting function is replaced by a separate DMOS cell (D) and emitter cell (E). The DMOS cell (D) contains a five-layer sequence of cathode short-circuit region (18), first channel region (19), second base layer (7), first base layer (8) and emitter layer (9). The emitter cell (E) contains a four-layer sequence of first emitter region (20), second base layer (7), first base layer (8) and emitter layer (9). This basic structure produces a component which is easy to produce and is distinguished by a high reverse-blocking capability.
|
申请公布号 |
US5698867(A) |
申请公布日期 |
1997.12.16 |
申请号 |
US19950409967 |
申请日期 |
1995.03.24 |
申请人 |
ASEA BROWN BOVERI LTD. |
发明人 |
BAUER, FRIEDHELM;VUILLEUMIER, RAYMOND |
分类号 |
H01L29/744;H01L29/74;H01L29/745;H01L29/749;(IPC1-7):H01L29/74;H01L31/111 |
主分类号 |
H01L29/744 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|