ACTIVE MATRIX SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To enhance a rate of nondefective products by making the film thickness of a insulating film forming an auxiliary capacitance thinner than the film tickness of an insulating film forming a thin film transistor to reduce the leakage between a drain electrode and a source wiring. SOLUTION: A gate wiring 14 as a scanning wiring, a Cs wiring 15 for forming an auxiliary capacitance and a source wiring as a signal line 16 are formed on the transparent insulating substrate 11 of glass or the like so as to intersect with each other. A TFT as a switching element is provided in the vicinity of the intersection part. A pixel electrode 12 and a drain electrode 18 are connected by the contact hole 19 provided in an interlayer insulating film 17. Moreover, an auxiliary capacitance part is formed by allowing the drain electrode 18 and the Cs wiring 15 to hold a gate insulating film 20. Then, the gate insulating film 20 of a part forming the auxiliary capacitance is formed thinner 20a. Since the gap between the drain electrode 18 and the source wiring 16 can be formed large by this structure, leakage faults are remarkably reduced.