发明名称 |
Method for fabricating lightly doped drain metal oxide semiconductor field effect transistor |
摘要 |
A lightly doped drain (LDD) metal oxide semiconductor field effect transistor (MOSFET). Field oxide is used as a hard mask for a total-overlap polysilicon (TOP) gate which minimizes hot-carrier degradation, so that a soft-mask step is saved. The field oxide is used also as a hard mask for surface counter-doping which reduces gate-induced drain leakage, and in making a punch-through stop which reduces drain-induced barrier low and short channel effect.
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申请公布号 |
US5698461(A) |
申请公布日期 |
1997.12.16 |
申请号 |
US19960614346 |
申请日期 |
1996.03.12 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LIU, MING-HUA |
分类号 |
H01L21/336;H01L29/10;H01L29/78;(IPC1-7):H01L21/335 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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