| 摘要 |
PROBLEM TO BE SOLVED: To secure the ESD breakdown voltage and to increase the pull-up and pull-down operation speeds by preparing an output circuit having a pull-up circuit and a pull-down circuit between a power terminal and an output terminal. SOLUTION: A pMOS transistor TR 37 undergoes the control of its conduction and non-conduction states by the output of an inverter 36, and a pMOS TR 38 has its gate connected to a ground terminal 32 and is always kept in a conduction state with ground voltage VSS applied to the gate in an active mode. The TR 37 and 38 are connected in series between a power terminal 31 and an output terminal 33 and construct an output pull-up circuit. Then an nMOS TR 39 undergoes the control of its conduction and non-conduction states by the output of the inverter 36, and an nMOS TR 40 has its gate connected to the terminal 31 and is always kept in a conduction state with power voltage VDD applied to the gate in an active mode. The TR 39 and 40 are connected in series between the terminals 33 and 32 and construct an output pull-down circuit. |
