发明名称 Current detection circuit for reading a memory in integrated circuit form
摘要 In a memory in integrated circuit form, organized as a matrix of rows and columns, a current detection circuit is connected at input to at least one column of the memory and at output to a corresponding read circuit. The current detection circuit includes a transistor connected between the input and the output and controlled at its gate by a reference current detection circuit.
申请公布号 US5699295(A) 申请公布日期 1997.12.16
申请号 US19960649282 申请日期 1996.05.17
申请人 SGS-THOMSON MICROELECTRONICS S.A. 发明人 YERO, EMILIO
分类号 G11C11/41;G11C7/14;G11C16/06;G11C16/28;G11C17/00;(IPC1-7):G11C7/06 主分类号 G11C11/41
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