发明名称 |
Current detection circuit for reading a memory in integrated circuit form |
摘要 |
In a memory in integrated circuit form, organized as a matrix of rows and columns, a current detection circuit is connected at input to at least one column of the memory and at output to a corresponding read circuit. The current detection circuit includes a transistor connected between the input and the output and controlled at its gate by a reference current detection circuit.
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申请公布号 |
US5699295(A) |
申请公布日期 |
1997.12.16 |
申请号 |
US19960649282 |
申请日期 |
1996.05.17 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.A. |
发明人 |
YERO, EMILIO |
分类号 |
G11C11/41;G11C7/14;G11C16/06;G11C16/28;G11C17/00;(IPC1-7):G11C7/06 |
主分类号 |
G11C11/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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