| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an electrostatic chuck device which enables uniform plasma processing of a substrate surface. SOLUTION: Two electrodes 21 , 22 formed in a flat shape are located substantially in the same plane. An insulating material 3 is provided on the surface of each of the electrodes 21 , 22 , and a substrate 4 is arranged on the surface of the insulating material 3. When a voltage is applied between the electrodes 21 , 22 to perform electrostatic attraction, the spacing between the two electrodes 21 , 22 is caused to be not greater than five times the thickness of the insulating material 3 on the electrodes 21 , 22 . The capacitance value between the substrate 4 and the electrodes 21 , 22 becomes substantially uniform at any point, thus enabling uniform plasma processing of the surface of the substrate 4. It is preferred that the spacing between the electrodes 21 , 22 is narrowed within such a range that static damage is not generated. However, in the case where the maximum applied voltage is determined, the magnitude of a current which flows on application of that voltage between the electrodes 21 , 22 may be caused to be not greater than the magnitude of a predetermined leakage current.</p> |
