| 摘要 |
<p>PROBLEM TO BE SOLVED: To set a in-plane temperature of a processed object to be a proscribed uniform temperature, in the case of processing the processed object in a reduced pressure environment. SOLUTION: A thermal conductivity gas is supplied from first and second thermal conductivity gas supply sections 6a, 6b to a middle and four peripheral parts of a surface of a lower electrode 3 between a semiconductor wafer 4 and the lower electrode 3, and flowmeters 81a, 81c measuring a very small mass or the like are provided to gas pipes 82a, 82c or the like for supplying gas to the four peripheral parts of the surface of the lower electrode 3. Based on signals from the flowmeters 81a, 81c measuring a very small mass, a controller 90, four drivers 51a, 51c or the like and a wafer retainer 5 are activated so as to adjust a retaining force to the semiconductor wafer 4 on the lower electrode 3 to which the four gas pipes 82a, 82c or the like are arranged, thereby uniformizing the close adhesion between the semiconductor wafer and the lower electrode 3. Thus, the processing speed within a plane of the semiconductor wafer 4 is almost made constant and then the semiconductor wafer is processed uniformly with excellent reproducibility.</p> |
