SEMICONDUCTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To reduce a chip area by decreasing the number of wirings of a selecting signal of redundant memory cell rows, arranged at side surfaces of plural cell array blocks and the like. SOLUTION: A redundant row encoder 7 coding redundancy selection signals XRD0-XRD3 from a replacing address program circuit at a position near replacing address program circuits 0-0 to 50-3 and outputting them is provided, and an output signal RXDS of the redundant row encoder 7 is transmitted to a block control sections 3-0 to 3-3. The output signal RXDS of the redundant row encoder 7 is decoded by the block control sections 3-0 to 3-3, and a redundant memory cell row of one row among redundant cell arrays 11-0 to 11-3 is selected. Thereby, the number of signal wirings for selecting a redundant memory cell row transmitted to the block control sections are reduced.