FERROELECTRIC THIN FILM DEVICE, MANUFACTURE THEREOF AND FERROELECTRIC MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a ferroelctric thin film device, a manufacturing method thereof and a ferroelectric memory device, enabling the low temp. film forming with reduced leak current. SOLUTION: The method of manufacturing a ferroelectric thin film device having a lower electrode layer 4, the ferroelectric thin film 5 and upper electrode layer 6 successively laminated on a substrate comprises forming an oxide thin film to be the ferroelectric thin film 5 on the lower electrode layer 4 formed on the substrate by the physical or chemical vapor deposition, forming the upper electrode layer 6 on this oxide thin film, and heating it to form the ferroelectric thin film 5 in a less pressure gas atmosphere than 1atm. in a heat treating step.