SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To reduce the capacitance of the bit lines of a semiconductor integrated circuit device having DRAM. SOLUTION: The semiconductor integrated circuit device comprises a DRAM having connection holes 9b1, 9b2a, 9b2b and 9a1 self-matchedly formed to connect semiconductor regions 4b, 4a of memory cell selective MOS FETs 4 to bit lines BL and capacitors 5 by covering the periphery of word lines WL with a silicon nitride cap insulation film 7a and side walls 7b. The bit lines BL are covered with a cap insulation film 11a and side walls 11b, each made of a material having a lower dielectric const. than that of the silicon nitride.