| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method thereof, enabling the adaptation to the voltage reduction, low power consumption and elimination of power for holding data during waiting by reducing the leak current between a drain region connected to a capacitor and semiconductor substrate to improve the retention characteristic of DRAM. SOLUTION: The semiconductor device comprises a single crystal Si layer 14a selectively epitaxially grown in active regions surrounded with an element isolating insulation film 12 on a Si substrate 10, a silicon oxide film 36 formed by implanting O ions between the Si layer 14a and Si substrate 10, and drain regions 16b which are formed on the surface of the Si layer 14a, connected to store electrodes 26 of capacitors, and adjoined to the insulation film 12 at the ends and to the silicon oxide film 36 at the lower ends. |
